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Insights on the Effect of Applied Potential on the Properties of Electrodeposited p-Type Cuprous Oxide (Cu2O) Thin Films 期刊论文
发表期刊: JOURNAL OF ELECTRONIC MATERIALS. 出版年: 2021
作者:  Derbal, Sabrine;  Benaicha, Mohamed
收藏  |  浏览/下载:21/0  |  提交时间:2021/07/30
Electrodeposion  thin films  semiconductor  Cu2O  Cu3O4  Cu64O  bandgap engineering  
Thermally Stable Inorganic Perovskite Solar Cells 会议论文
会议名称: 47th IEEE Photovoltaic Specialists Conference (PVSC). 会议地点: ELECTR NETWORK. 会议日期: JUN 15-AUG 21, 2020
作者:  Gaonkar, Harsh;  Zhu, Junhao;  Kottokkaran, Ranjith;  Noack, Max;  Dalal, Vikram
收藏  |  浏览/下载:1/0  |  提交时间:2021/08/05
Perovskite solar cells  Inorganic perovskite  Layer by layer deposition  
Elastic Metamaterial Design To Filter Harmonic Mechanical Wave Propagation 会议论文
会议名称: ASMEInternational Mechanical Engineering Congress and Exposition (IMECE2018). 会议地点: Pittsburgh, PA. 会议日期: NOV 09-15, 2018
作者:  Rodrigues, Gustavo Simao;  Weber, Hans Ingo;  Driemeier, Larissa
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/09
Elastic Metamaterial Design To Filter Harmonic Mechanical Wave Propagation 会议论文
会议名称: ASMEInternational Mechanical Engineering Congress and Exposition (IMECE2018). 会议地点: Pittsburgh, PA. 会议日期: NOV 09-15, 2018
作者:  Rodrigues, Gustavo Simao;  Weber, Hans Ingo;  Driemeier, Larissa
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/09
Low temperature lithographically patterned metal oxide transistors for large area electronics 学位论文
学位授予机构: Massachusetts Institute of Technology. 出版年: 2011
作者:  Wang;  Annie I. (Annie I-Jen);  1981-
收藏  |  浏览/下载:2/0  |  提交时间:2019/11/29
InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE 会议论文
会议名称: 10th China/Korea Workshop on Advanced Materials. 会议地点: Huangshan, PEOPLES R CHINA. 会议日期: AUG 21-24, 2006
作者:  Ai Likun;  Xu Anhuai;  Sun Hao;  Zhu Fuying;  Qi Ming
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/07
double heterojunction bipolar transistor (DHBT)  gas source molecular beam epitaxy (GSMBE)  gallium arsenic (GaAs)  indium gallium arsenic (InGaAs)  
InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE 期刊论文
发表期刊: RARE METALS. 出版年: 2006, 卷号: 25, 页码: 20-23
作者:  Ai Likun;  Xu Anhuai;  Sun Hao;  Zhu Fuying;  Qi Ming
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/28
double heterojunction bipolar transistor (DHBT)  gas source molecular beam epitaxy (GSMBE)  gallium arsenic (GaAs)  indium gallium arsenic (InGaAs)