干旱区生态环境知识资源中心(Arid): Insights on the Effect of Applied Potential on the Properties of Electrodeposited p-Type Cuprous Oxide (Cu2O) Thin Films

Arid

DOI	10.1007/s11664-021-09057-6
	Insights on the Effect of Applied Potential on the Properties of Electrodeposited p-Type Cuprous Oxide (Cu2O) Thin Films
	Derbal, Sabrine; Benaicha, Mohamed
通讯作者	Benaicha, M (corresponding author), Ferhat ABBAS Setif1 Univ, Dept Proc Engn, Energet & Solid State Electrochem Lab, Setif 19000, Algeria.
来源期刊	JOURNAL OF ELECTRONIC MATERIALS
ISSN	0361-5235
EISSN	1543-186X
出版年	2021
英文摘要	In this work, the effect of the applied cathodic potential on properties of electrodeposited p-type Cu2O thin films was investigated. Electrochemical deposition was carried out on indium tin oxide (ITO) substrate from alkaline Cu(II) lactate-based solution at different cathodic potentials (- 0.60 to - 0.80 V vs. Ag/AgCl) without subsequent annealing. It was shown that changing the electrodeposition applied potential could tune both the phase structure and band gap energy of the Cu2O thin films. The morphological, optical, and structural characterizations of the deposits were carried out using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and UV-VIS spectroscopy, respectively. FESEM observations of the as-prepared deposits revealed uniform, rough and desert rose-like crystallites composed of square or triangular pyramidal and truncated polyhedral morphologies. The XRD investigation showed that the films were crystalline and revealed the presence of two other sub-stoichiometric copper oxide phases (Cu4O3 and Cu64O), depending on the applied potential. The crystallite size, evaluated using the Scherer formula, varied tightly with the cathode potential and increased in the - 0.65 to - 0.75 V potential range, indicating that the films are of better crystallization. The optical band gaps, deduced from experimental Tauc plots, were found to be 2.33, 1.98, 2.25, 2.27 and 2.50 eV for thin films deposited at - 0.60, - 0.65, - 0.70, - 0.75 and - 0.8 V vs Ag/AgCl, respectively. A mechanism of the phase formation is proposed and discussed.
英文关键词	Electrodeposion thin films semiconductor Cu2O Cu3O4 Cu64O bandgap engineering
类型	Article ; Early Access
语种	英语
收录类别	SCI-E
WOS记录号	WOS:000662804600002
WOS关键词	ELECTROCHEMICAL DEPOSITION ; SOLAR-CELLS ; OXIDATION ; GROWTH ; NANOPARTICLES ; NUCLEATION ; SURFACE ; ARRAYS ; LAYER
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
WOS研究方向	Engineering ; Materials Science ; Physics
资源类型	期刊论文
条目标识符	http://119.78.100.177/qdio/handle/2XILL650/352320
作者单位	[Derbal, Sabrine; Benaicha, Mohamed] Ferhat ABBAS Setif1 Univ, Dept Proc Engn, Energet & Solid State Electrochem Lab, Setif 19000, Algeria
推荐引用方式 GB/T 7714	Derbal, Sabrine,Benaicha, Mohamed. Insights on the Effect of Applied Potential on the Properties of Electrodeposited p-Type Cuprous Oxide (Cu2O) Thin Films[J],2021.
APA	Derbal, Sabrine,&Benaicha, Mohamed.(2021).Insights on the Effect of Applied Potential on the Properties of Electrodeposited p-Type Cuprous Oxide (Cu2O) Thin Films.JOURNAL OF ELECTRONIC MATERIALS.
MLA	Derbal, Sabrine,et al."Insights on the Effect of Applied Potential on the Properties of Electrodeposited p-Type Cuprous Oxide (Cu2O) Thin Films".JOURNAL OF ELECTRONIC MATERIALS (2021).