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A highly manufacturable 110nm DRAM technology with 8F(2) vertical transistor cell for 1Gb and beyond 会议论文
会议名称: Symposium on VLSI Technology. 会议地点: HONOLULU, HI. 会议日期: JUN 11-13, 2002
作者:  Akatsu, H;  Weis, R;  Cheng, K;  Seitz, M;  Kim, MS;  Ramachandran, R;  Dyer, T;  Kim, B;  Kim, DK;  Malik, R;  Strane, J;  Goebel, T;  Kwon, OJ;  Sung, CY;  Parkinson, P;  Wilson, K;  McStay, I;  Chudzik, M;  Dobuzinsky, D;  Jacunski, M;  Ransom, C;  Settlemyer, K;  Economikos, L;  Simpson, A;  Knorr, A;  Naeem, M;  Stojakovic, G;  Robl, W;  Gluschenkov, O;  Liegl, B;  Wu, CH;  Wu, Q;  Li, WK;  Choi, CJ;  Arnold, N;  Joseph, T;  Varn, K;  Weybright, M;  McStay, K;  Kang, WT;  Li, Y;  Bukofsky, S;  Jammy, R;  Schutz, R;  Gutmann, A;  Bergner, W;  Divakaruni, R;  Back, D;  Crabbe, E;  Mueller, W;  Bronner, G
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/07
Schwann cells as regulators of nerve development 期刊论文
发表期刊: JOURNAL OF PHYSIOLOGY-PARIS. 出版年: 2002, 卷号: 96, 期号: 1-2, 页码: 17-24
作者:  Mirsky, R;  Jessen, KR;  Brennan, A;  Parkinson, D;  Dong, ZP;  Meier, C;  Parmantier, E;  Lawson, D
收藏  |  浏览/下载:20/0  |  提交时间:2019/11/28
Schwann cell  peripheral nerve  neuregulin  growth factor  axon-glial interaction