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| Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors Large-area chemical vapor deposition growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors 学位论文
学位授予机构: Massachusetts Institute of Technology. 出版年: 2017
作者: Shen;Pin-Chun
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| Indirect conversion amorphous selenium photodetectors for medical imaging applications 学位论文
出版年: 2014
作者: Abbaszadeh;Shiva
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Medical imaging Optoelectronics Photo-induced effects Amorphous selenium Dark current Avalanche multiplication gain Large area electronics Metal-semiconductor-metal device X-ray imaging Positron emission tomography Flat panel computed tomography Blocking layer UV detection |
| High Performance, Low Cost Lateral Metal-Semiconductor-Metal Photodetector for Large Area Indirect X-Ray Imaging 学位论文
出版年: 2013
作者: Ghanbarzadeh;Sina
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Amorphous Silicon Indirect conversion X-ray imaging Dark current MSM photodetectors |
| The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors 学位论文
学位授予机构: University of Central Florida. 出版年: 2012
作者: Kang;Narae
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DescriptionOrganic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility transparency easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display |
| Thin polycrystalline films of indium phosphide on low-cost substrates. Quarterly report No. 3, April 3--July 2, 1977 科技报告
报告编号: ALO-3727-77/3. 出版年: 1977
作者: Ruth, R.P.; Dapkus, P.D.; Manasevit, H.M.; Campbell, A.G.; Hess, K.L.; Johnson, R.E.; Moudy, L.A.
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