干旱区生态环境知识资源中心(Arid): Diagnostic-driven yield engineering under atypical wafer foundry conditions

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DOI	10.1016/j.microrel.2021.114076
	Diagnostic-driven yield engineering under atypical wafer foundry conditions
	Ngow, Y. T.; Goh, S. H.
通讯作者	Ngow, YT (corresponding author), GLOBALFOUNDRIES, Yield Diagnost Engn, Singapore, Singapore.
来源期刊	MICROELECTRONICS RELIABILITY
ISSN	0026-2714
出版年	2021
卷号	119
英文摘要	Typically, diagnostic-driven yield engineering consists of two sequential steps- data mining and failure analysis. Data mining seeks early feedback on suspected manufacturing process weakness while failure analysis reveals the physical defect to understand the root cause. However, under atypical conditions such as that in a wafer foundry environment, sufficient information is not available to attain optimal outcomes. Specifically, during volume data analysis, although Root Cause Deconvolution has the ability to predict process weakness using an unsupervised learning algorithm, it only works on random defects. Additionally, GDS layout of IP-secure product might also not be available to a foundry impeding physical failure analysis. Motivated by heightened demands on wafer foundries to deliver faster yield ramp to gain the competitive edge, this paper proposes solutions to overcome these limitations. An enhanced analytical scheme that offers early insights into process weakness (frontend and backend differentiation) regardless of fail mode, and a solution that enables physical failure analysis in the absence of direct access to GDS layout are proposed. An automated approach that captures image snapshots of suspected polygons without compromising confidentiality of the GDS content of IP-protected product is also developed. Experimental results will be presented as an illustration.
英文关键词	Root Cause Deconvolution (RCD) Tessent Yield Insight (TYI) Set of unique Graphic Database System (GDS) Open Artwork System Interchange Standard (OASIS) Scan diagnosis User-Defined Online Search (UDOS) KDB (conversion of GDS information in to Avalon database) Synopsys Avalon
类型	Article
语种	英语
收录类别	SCI-E
WOS记录号	WOS:000637756900010
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
资源类型	期刊论文
条目标识符	http://119.78.100.177/qdio/handle/2XILL650/351139
作者单位	[Ngow, Y. T.; Goh, S. H.] GLOBALFOUNDRIES, Yield Diagnost Engn, Singapore, Singapore
推荐引用方式 GB/T 7714	Ngow, Y. T.,Goh, S. H.. Diagnostic-driven yield engineering under atypical wafer foundry conditions[J],2021,119.
APA	Ngow, Y. T.,&Goh, S. H..(2021).Diagnostic-driven yield engineering under atypical wafer foundry conditions.MICROELECTRONICS RELIABILITY,119.
MLA	Ngow, Y. T.,et al."Diagnostic-driven yield engineering under atypical wafer foundry conditions".MICROELECTRONICS RELIABILITY 119(2021).