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Climate-specific Thermal Model Coefficients for c-Si and Thin-Film PV Modules | |
Pavgi, Ashwini; Kuitche, Joseph; Oh, Jaewon; TamizhMani, GovindaSamy | |
通讯作者 | Pavgi, Ashwini |
会议名称 | IEEE 44th Photovoltaic Specialist Conference (PVSC) |
会议日期 | JUN 25-30, 2017 |
会议地点 | Washington, DC |
英文摘要 | The thermal model coefficients (Uc and Uv), similar to the thermal loss factors used in PVsyst for various PV technologies specific to a hot climate are presented in this paper. Minitab, a statistics package was used for the analysis of the data. These coefficients were determined by statistically correlating a year-long data for the modules mounted on free-standing arrays of four PV technologies (crystalline silicon, CdTe, CIGS, a-Si) which experienced hot-desert climate conditions. Various statistical approaches were used to analyze the data. Limiting the wind speed in the one hour interval data showed statistically satisfactory patterns in the model adequacy plots. The U-c and U-v values determined for a-Si module with Tefzel superstrate was higher than the a-Si module with glass superstrate. The lowest U-c and U-v values were observed for CdTe PV technology. For crystalline PV technology, U-c value of 25.46 W/m(2).K and U-v value of 4.31 W/m(3).K.s were obtained. |
英文关键词 | thermal model thermal loss factors PVsyst hotdesert climate |
来源出版物 | 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) |
ISSN | 0160-8371 |
出版年 | 2017 |
页码 | 1883-1887 |
EISBN | 978-1-5090-5605-7 |
出版者 | IEEE |
类型 | Proceedings Paper |
语种 | 英语 |
国家 | USA |
收录类别 | CPCI-S |
WOS记录号 | WOS:000455636001206 |
WOS类目 | Energy & Fuels ; Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS研究方向 | Energy & Fuels ; Engineering ; Materials Science ; Physics |
资源类型 | 会议论文 |
条目标识符 | http://119.78.100.177/qdio/handle/2XILL650/306739 |
作者单位 | ASU, PRL, Mesa, AZ 85212 USA |
推荐引用方式 GB/T 7714 | Pavgi, Ashwini,Kuitche, Joseph,Oh, Jaewon,et al. Climate-specific Thermal Model Coefficients for c-Si and Thin-Film PV Modules[C]:IEEE,2017:1883-1887. |
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