Arid
The illuviation of CaCO3 and the deposition of clay in Cal-ustic Isohumisols
Bai Haifeng1; Li Pinfang1; Zhang Biao1; Eneji, A. Egrinya2
通讯作者Li Pinfang
会议名称IEEE International Conference on Electronics, Communications and Control (ICECC)
会议日期SEP 09-11, 2011
会议地点Ningbo, PEOPLES R CHINA
英文摘要

In order to understand the illuviation of CaCO3 and the deposition of clay, we chose a plot of 700 m x 900 m in the Arid Agriculture Experimental Station (AAES) of Wu Chuan in Inner Mongolia of China to serve as the study area. The study area is located in the arid and semiarid region, CaCO3 were widely exist in the soil profiles. 80 soil profiles were undertaken. We measured CaCO3 contents and soil textures. The study indicates that soil CaCO3 was mainly in sub-surface horizons. The range of CaCO3 content was from 6.7 g kg(-1) (humus horizon) to 231.1 g kg(-1) (calcic horizon). The means of CaCO3 contents varied in the order Bk > C > AB > A, and there were same trend for clay fractions. The illuviation of CaCO3 and the deposition of clay are concurrent and interactive. Usually, there is a higher clay fraction in the calcic horizon because of flocculation. Through the research, we can further study the association between CaCO3 illuvation and clay deposition.


英文关键词CaCO3 content clay fraction illuviation Cal-ustic Isohumisols
来源出版物2011 INTERNATIONAL CONFERENCE ON ELECTRONICS, COMMUNICATIONS AND CONTROL (ICECC)
出版年2011
页码2359-2362
EISBN978-1-4577-0321-8
出版者IEEE
类型Proceedings Paper
语种英语
国家Peoples R China;Nigeria
收录类别CPCI-S
WOS记录号WOS:000298656802120
WOS关键词CALCAREOUS SOILS ; IRAN
WOS类目Automation & Control Systems ; Engineering, Electrical & Electronic
WOS研究方向Automation & Control Systems ; Engineering
资源类型会议论文
条目标识符http://119.78.100.177/qdio/handle/2XILL650/300097
作者单位1.China Agr Univ, Coll Resources & Environm Sci, Beijing 100193, Peoples R China;
2.Univ Calabar, Dept Soil Sci, Calabar, Nigeria
推荐引用方式
GB/T 7714
Bai Haifeng,Li Pinfang,Zhang Biao,et al. The illuviation of CaCO3 and the deposition of clay in Cal-ustic Isohumisols[C]:IEEE,2011:2359-2362.
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