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In this work we investigate the efficiency of single wafer wet cleaning processes to remove metallic surface contamination on the Oasis Clean single wafer processing tool. We studied a single step modified SC1 process - with chelating and surfactant additives, called AM-Clean - as well as two cleaning step processes. As such we were able to select single wafer AM-Clean process sequences that are compatible with 0.13mum and beyond FEOL technologies and process flows to substitute conventional batch cleaning processes.