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We report measurements of electron temperatures (T-e) during the etching of silicon dioxide damage tester wafers. The high-density plasma feed,oases consisted of a mixture of C2F6, C4F8, Ar, and Ne. T-e was measured by trace rare gases optical emission spectroscopy. Full emission spectra were recorded with a CCD array detector spectrometer every 0.5 s during the: full etching process (including stabilization and cleaning steps) for a batch of 44 wafers (22 damage testers and 22 blank Si wafers). Measurements were made as a function of selected variables such as the Ar-to-Ne carrier gas ratio, pressure, and total gas flowrate. As expected, T-e increased with the fraction of added Ne, but exhibited an unusual pressure dependence, decreasing with decreasing pressure below similar to 30 mTorr.