Arid
DOI10.1002/aenm.201700476
Effect of Electron-Transport Material on Light-Induced Degradation of Inverted Planar Junction Perovskite Solar Cells
Akbulatov, Azat F.1; Frolova, Lyubov A.1; Griffin, Monroe P.2; Gearba, Ioana R.3; Dolocan, Andrei3; Vanden Bout, David A.2; Tsarev, Sergey4; Katz, Eugene A.5,6; Shestakov, Alexander F.1; Stevenson, Keith J.4; Troshin, Pavel A.1,4
通讯作者Troshin, Pavel A.
来源期刊ADVANCED ENERGY MATERIALS
ISSN1614-6832
EISSN1614-6840
出版年2017
卷号7期号:19
英文摘要

This paper presents a systematic study of the influence of electron-transport materials on the operation stability of the inverted perovskite solar cells under both laboratory indoor and the natural outdoor conditions in the Negev desert. It is shown that all devices incorporating a Phenyl C-61 Butyric Acid Methyl ester ([60] PCBM) layer undergo rapid degradation under illumination without exposure to oxygen and moisture. Time-of-flight secondary ion mass spectrometry depth profiling reveals that volatile products from the decomposition of methylammonium lead iodide (MAPbI(3)) films diffuse through the [60] PCBM layer, go all the way toward the top metal electrode, and induce its severe corrosion with the formation of an interfacial AgI layer. On the contrary, alternative electron-transport material based on the perylen-diimide derivative provides good isolation for the MAPbI(3) films preventing their decomposition and resulting in significantly improved device operation stability. The obtained results strongly suggest that the current approach to design inverted perovskite solar cells should evolve with respect to the replacement of the commonly used fullerene-based electron-transport layers with other types of materials (e.g., functionalized perylene diimides). It is believed that these findings pave a way toward substantial improvements in the stability of the perovskite solar cells, which are essential for successful commercialization of this photovoltaic technology.


英文关键词interdiffusion PCBM perovskite solar cells photochemical degradation TOF-SIMS
类型Article
语种英语
国家Russia ; USA ; Israel
收录类别SCI-E
WOS记录号WOS:000414918700012
WOS关键词CRYSTAL-STRUCTURE ; PERFORMANCE ; INTERFACE ; STABILITY ; PCBM ; EFFICIENCY ; POLYMER ; LAYERS
WOS类目Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS研究方向Chemistry ; Energy & Fuels ; Materials Science ; Physics
来源机构Ben-Gurion University of the Negev
资源类型期刊论文
条目标识符http://119.78.100.177/qdio/handle/2XILL650/197013
作者单位1.Russian Acad Sci, Inst Problems Chem Phys, Semenov Prospect 1, Chernogolovka 141432, Russia;
2.Univ Texas Austin, Dept Chem, Austin, TX 78712 USA;
3.Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA;
4.Skolkovo Inst Sci & Technol, Nobel St 3, Moscow 143026, Russia;
5.Ben Gurion Univ Negev, Jacob Blaustein Inst Desert Res, Dept Solar Energy & Environm Phys, Sede Boqer Campus, IL-84990 Midershet Ben Gurion, Israel;
6.Ben Gurion Univ Negev, Ilse Katz Inst Nano Sci & Technol, IL-84105 Beer Sheva, Israel
推荐引用方式
GB/T 7714
Akbulatov, Azat F.,Frolova, Lyubov A.,Griffin, Monroe P.,et al. Effect of Electron-Transport Material on Light-Induced Degradation of Inverted Planar Junction Perovskite Solar Cells[J]. Ben-Gurion University of the Negev,2017,7(19).
APA Akbulatov, Azat F..,Frolova, Lyubov A..,Griffin, Monroe P..,Gearba, Ioana R..,Dolocan, Andrei.,...&Troshin, Pavel A..(2017).Effect of Electron-Transport Material on Light-Induced Degradation of Inverted Planar Junction Perovskite Solar Cells.ADVANCED ENERGY MATERIALS,7(19).
MLA Akbulatov, Azat F.,et al."Effect of Electron-Transport Material on Light-Induced Degradation of Inverted Planar Junction Perovskite Solar Cells".ADVANCED ENERGY MATERIALS 7.19(2017).
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Akbulatov, Azat F.]的文章
[Frolova, Lyubov A.]的文章
[Griffin, Monroe P.]的文章
百度学术
百度学术中相似的文章
[Akbulatov, Azat F.]的文章
[Frolova, Lyubov A.]的文章
[Griffin, Monroe P.]的文章
必应学术
必应学术中相似的文章
[Akbulatov, Azat F.]的文章
[Frolova, Lyubov A.]的文章
[Griffin, Monroe P.]的文章
相关权益政策
暂无数据
收藏/分享

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。