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The purpose of this study was to analyze the effects of silicon (Si) nutrition on sorghum growth under drought. The present study investigated the distribution of Si in plant parts under stress conditions and its effects on physiological and growth traits. The study was conducted during 2 years (2007-2009) at PMAS Arid Agriculture University, Rawalpindi, Pakistan. Polyethylene glycol (PEG) 6000 (-4.0, -6.0, -8.0, and -10.0 Mpa) solution was used to screen drought-tolerant (Johar1) and drought-susceptible (SPV462) sorghum (Sorghum bicolor L.) cultivars, which were replicated three times with Si sources of potassium silicate (K2SiO3) (Si-300: 300 ml L-1) and control (Si-0) treatments. The results showed that drought-tolerant cultivars accumulated maximum Si under Si treatment versus Si absence, which resulted increased leaf water potential, leaf area index, Soil Plant Analysis Development (SPAD) chlorophyll, net assimilation, and relative growth rate over SPV462. Similarly, Si accumulation in leaves conserved transpiration and leaf water potential, verifying Si nutrition as a defense for plants under drought.