干旱区生态环境知识资源中心(Arid): Surfactant selection for AM clean in a single wafer Oasis Wet System

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DOI	10.4028/www.scientific.net/SSP.92.57
	Surfactant selection for AM clean in a single wafer Oasis Wet System
	Baker, J; Beaudry, C; Morinaga, H; Verhaverbeke, S
通讯作者	Baker, J
来源期刊	ULTRA CLEAN PROCESSING OF SILICON SURFACES V
ISSN	1012-0394
出版年	2003
卷号	92 页码:57-61
英文摘要	In this work we have investigated several types of surfactants and their ability to enhance the particle removal capability of a modified SC-1 only clean in an Oasis Wet System. Although there are several types of surfactants, we narrowed it down and called them Surfactant1, 2, and 3. These surfactants have the desirable properties needed for use in a semiconductor fab. They rinse easily leaving little residue, they are low foaming, and they have enhanced removal rates over typical SC-1.
英文关键词	surfactant RCA single wafer Oasis and SC-1
类型	Article ; Proceedings Paper
语种	英语
国家	USA
收录类别	CPCI-S ; SCI-E
WOS记录号	WOS:000183458700014
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS研究方向	Materials Science ; Physics
资源类型	期刊论文
条目标识符	http://119.78.100.177/qdio/handle/2XILL650/145959
作者单位	(1)Appl Mat Inc, Santa Clara, CA 95054 USA
推荐引用方式 GB/T 7714	Baker, J,Beaudry, C,Morinaga, H,et al. Surfactant selection for AM clean in a single wafer Oasis Wet System[J],2003,92:57-61.
APA	Baker, J,Beaudry, C,Morinaga, H,&Verhaverbeke, S.(2003).Surfactant selection for AM clean in a single wafer Oasis Wet System.ULTRA CLEAN PROCESSING OF SILICON SURFACES V,92,57-61.
MLA	Baker, J,et al."Surfactant selection for AM clean in a single wafer Oasis Wet System".ULTRA CLEAN PROCESSING OF SILICON SURFACES V 92(2003):57-61.