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DOI	10.4028/www.scientific.net/SSP.92.49
	Metallic contamination removal evaluation for single wafer processing
	Boelen, P; Verhaverbeke, S; Garnier, P; Levy, D; Morinaga, H
通讯作者	Boelen, P
来源期刊	ULTRA CLEAN PROCESSING OF SILICON SURFACES V
ISSN	1012-0394
出版年	2003
卷号	92 页码:49-52
英文摘要	In this work we investigate the efficiency of single wafer wet cleaning processes to remove metallic surface contamination on the Oasis Clean single wafer processing tool. We studied a single step modified SC1 process - with chelating and surfactant additives, called AM-Clean - as well as two cleaning step processes. As such we were able to select single wafer AM-Clean process sequences that are compatible with 0.13mum and beyond FEOL technologies and process flows to substitute conventional batch cleaning processes.
英文关键词	metallic contamination single wafer cleaning chelating agent
类型	Article ; Proceedings Paper
语种	英语
国家	USA
收录类别	CPCI-S ; SCI-E
WOS记录号	WOS:000183458700012
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS研究方向	Materials Science ; Physics
资源类型	期刊论文
条目标识符	http://119.78.100.177/qdio/handle/2XILL650/145958
作者单位	(1)Appl Mat Inc, Single Wafer Cleaning Grp, TCG, Santa Clara, CA 95054 USA
推荐引用方式 GB/T 7714	Boelen, P,Verhaverbeke, S,Garnier, P,et al. Metallic contamination removal evaluation for single wafer processing[J],2003,92:49-52.
APA	Boelen, P,Verhaverbeke, S,Garnier, P,Levy, D,&Morinaga, H.(2003).Metallic contamination removal evaluation for single wafer processing.ULTRA CLEAN PROCESSING OF SILICON SURFACES V,92,49-52.
MLA	Boelen, P,et al."Metallic contamination removal evaluation for single wafer processing".ULTRA CLEAN PROCESSING OF SILICON SURFACES V 92(2003):49-52.