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Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors Large-area chemical vapor deposition growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors 学位论文
学位授予机构: Massachusetts Institute of Technology. 出版年: 2017
作者:  Shen;Pin-Chun
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Indirect conversion amorphous selenium photodetectors for medical imaging applications 学位论文
出版年: 2014
作者:  Abbaszadeh;Shiva
收藏  |  浏览/下载:5/0  |  提交时间:2019/11/29
Medical imaging  Optoelectronics  Photo-induced effects  Amorphous selenium  Dark current  Avalanche multiplication gain  Large area electronics  Metal-semiconductor-metal device  X-ray imaging  Positron emission tomography  Flat panel computed tomography  Blocking layer  UV detection  
High Performance, Low Cost Lateral Metal-Semiconductor-Metal Photodetector for Large Area Indirect X-Ray Imaging 学位论文
出版年: 2013
作者:  Ghanbarzadeh;Sina
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Amorphous Silicon  Indirect conversion X-ray imaging  Dark current  MSM photodetectors  
The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors 学位论文
学位授予机构: University of Central Florida. 出版年: 2012
作者:  Kang;Narae
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DescriptionOrganic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility transparency easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display